Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap Engineering

Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap Engineering

The suitability of Ti as a band gap modifier for <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> was investigated, taking advantage of the is...

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Bibliographic Details
Main Authors: Armin Barthel, Joseph Roberts, Mari Napari, Martin Frentrup, Tahmida Huq, András Kovács, Rachel Oliver, Paul Chalker, Timo Sajavaara, Fabien Massabuau
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Micromachines
Subjects:
gallium oxide
wide band gap semiconductors
solar-blind detection
atomic layer deposition
thin films
alloying
Online Access:https://www.mdpi.com/2072-666X/11/12/1128

Internet

https://www.mdpi.com/2072-666X/11/12/1128

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