Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film

The reversible and multi-stimuli responsive insulator-metal transition of VO<sub>2</sub>, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into t...

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Main Authors: Chang Lu, Qingjian Lu, Min Gao, Yuan Lin
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/1/114
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spelling doaj-e51a9875b79846d496609654662691d62021-01-07T00:03:30ZengMDPI AGNanomaterials2079-49912021-01-011111411410.3390/nano11010114Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin FilmChang Lu0Qingjian Lu1Min Gao2Yuan Lin3School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, ChinaThe reversible and multi-stimuli responsive insulator-metal transition of VO<sub>2</sub>, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO<sub>2</sub> films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO<sub>2</sub> as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO<sub>2</sub>. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO<sub>2</sub> component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports “quasi-simultaneous” IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO<sub>2</sub> film and VO<sub>2</sub> hybrid metamaterials is surveyed, highlighting that VO<sub>2</sub> can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO<sub>2</sub>-based tuneable THz devices are discussed.https://www.mdpi.com/2079-4991/11/1/114vanadium dioxidethin filmphase transitionexternal stimuliactive modulationterahertz
collection DOAJ
language English
format Article
sources DOAJ
author Chang Lu
Qingjian Lu
Min Gao
Yuan Lin
spellingShingle Chang Lu
Qingjian Lu
Min Gao
Yuan Lin
Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film
Nanomaterials
vanadium dioxide
thin film
phase transition
external stimuli
active modulation
terahertz
author_facet Chang Lu
Qingjian Lu
Min Gao
Yuan Lin
author_sort Chang Lu
title Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film
title_short Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film
title_full Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film
title_fullStr Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film
title_full_unstemmed Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO<sub>2</sub> Thin Film
title_sort dynamic manipulation of thz waves enabled by phase-transition vo<sub>2</sub> thin film
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2021-01-01
description The reversible and multi-stimuli responsive insulator-metal transition of VO<sub>2</sub>, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO<sub>2</sub> films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO<sub>2</sub> as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO<sub>2</sub>. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO<sub>2</sub> component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports “quasi-simultaneous” IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO<sub>2</sub> film and VO<sub>2</sub> hybrid metamaterials is surveyed, highlighting that VO<sub>2</sub> can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO<sub>2</sub>-based tuneable THz devices are discussed.
topic vanadium dioxide
thin film
phase transition
external stimuli
active modulation
terahertz
url https://www.mdpi.com/2079-4991/11/1/114
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AT qingjianlu dynamicmanipulationofthzwavesenabledbyphasetransitionvosub2subthinfilm
AT mingao dynamicmanipulationofthzwavesenabledbyphasetransitionvosub2subthinfilm
AT yuanlin dynamicmanipulationofthzwavesenabledbyphasetransitionvosub2subthinfilm
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