High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative

High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative

Abstract Developing high‐quality electret layer is important for the fabrication of high‐performance nonvolatile organic field effect transistor memory devices (OFET‐NVMs). In this work, three representative aromatic diimide frameworks are employed for comparative studies as n‐type doping materials...

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Bibliographic Details
Main Authors: Wei Vanessa Wang, Yamin Zhang, Xiang‐Yang Li, Zi‐Zhen Chen, Ze‐Hua Wu, Lei Zhang, Ze‐Wei Lin, Hao‐Li Zhang
Format: Article
Language:English
Published: Wiley 2021-07-01
Series:InfoMat
Subjects:
aromatic diimides
electret layers
memory
n‐type doping materials
organic field‐effect transistor
Online Access:https://doi.org/10.1002/inf2.12186

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