High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative
Abstract Developing high‐quality electret layer is important for the fabrication of high‐performance nonvolatile organic field effect transistor memory devices (OFET‐NVMs). In this work, three representative aromatic diimide frameworks are employed for comparative studies as n‐type doping materials...
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| Online Access: | https://doi.org/10.1002/inf2.12186 |
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doaj-e51409a0c192437aab20e13f88befc412021-07-01T23:16:40ZengWileyInfoMat2567-31652021-07-013781482210.1002/inf2.12186High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivativeWei Vanessa Wang0Yamin Zhang1Xiang‐Yang Li2Zi‐Zhen Chen3Ze‐Hua Wu4Lei Zhang5Ze‐Wei Lin6Hao‐Li Zhang7State Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaState Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering Lanzhou University Lanzhou ChinaAbstract Developing high‐quality electret layer is important for the fabrication of high‐performance nonvolatile organic field effect transistor memory devices (OFET‐NVMs). In this work, three representative aromatic diimide frameworks are employed for comparative studies as n‐type doping materials for the electret layers in OFET‐NVMs, which are naphthalene diimide (NDI), perylene diimide (PDI), and pyrene diimide (PyDI). When blended with polystyrene (PS) to prepare the electret layers, all the memory devices containing aromatic diimide dopants exhibited significantly improved performances compared with the undoped counterparts, indicating that low‐lying LUMO energy levels of these dopants are beneficial for charge injection. All the devices with n‐type dopants exhibited long retention times (more than 104 s) and good switching reliability in more than 400 continuous write‐read‐erase‐read cycles. Among them, the PyDI‐based memory device exhibited superior performance compared with other aromatic diimides, which achieved a memory window of 34.0 V, a trapping charge density of 1.98 × 1012 cm−2 along with an on/off ratio higher than 104. This work indicates that PyDI framework could be a new platform for the future design of n‐type dopant for high‐performance nonvolatile organic field‐effect transistor memory devices.https://doi.org/10.1002/inf2.12186aromatic diimideselectret layersmemoryn‐type doping materialsorganic field‐effect transistor |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Wei Vanessa Wang Yamin Zhang Xiang‐Yang Li Zi‐Zhen Chen Ze‐Hua Wu Lei Zhang Ze‐Wei Lin Hao‐Li Zhang |
| spellingShingle |
Wei Vanessa Wang Yamin Zhang Xiang‐Yang Li Zi‐Zhen Chen Ze‐Hua Wu Lei Zhang Ze‐Wei Lin Hao‐Li Zhang High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative InfoMat aromatic diimides electret layers memory n‐type doping materials organic field‐effect transistor |
| author_facet |
Wei Vanessa Wang Yamin Zhang Xiang‐Yang Li Zi‐Zhen Chen Ze‐Hua Wu Lei Zhang Ze‐Wei Lin Hao‐Li Zhang |
| author_sort |
Wei Vanessa Wang |
| title |
High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative |
| title_short |
High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative |
| title_full |
High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative |
| title_fullStr |
High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative |
| title_full_unstemmed |
High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative |
| title_sort |
high performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative |
| publisher |
Wiley |
| series |
InfoMat |
| issn |
2567-3165 |
| publishDate |
2021-07-01 |
| description |
Abstract Developing high‐quality electret layer is important for the fabrication of high‐performance nonvolatile organic field effect transistor memory devices (OFET‐NVMs). In this work, three representative aromatic diimide frameworks are employed for comparative studies as n‐type doping materials for the electret layers in OFET‐NVMs, which are naphthalene diimide (NDI), perylene diimide (PDI), and pyrene diimide (PyDI). When blended with polystyrene (PS) to prepare the electret layers, all the memory devices containing aromatic diimide dopants exhibited significantly improved performances compared with the undoped counterparts, indicating that low‐lying LUMO energy levels of these dopants are beneficial for charge injection. All the devices with n‐type dopants exhibited long retention times (more than 104 s) and good switching reliability in more than 400 continuous write‐read‐erase‐read cycles. Among them, the PyDI‐based memory device exhibited superior performance compared with other aromatic diimides, which achieved a memory window of 34.0 V, a trapping charge density of 1.98 × 1012 cm−2 along with an on/off ratio higher than 104. This work indicates that PyDI framework could be a new platform for the future design of n‐type dopant for high‐performance nonvolatile organic field‐effect transistor memory devices. |
| topic |
aromatic diimides electret layers memory n‐type doping materials organic field‐effect transistor |
| url |
https://doi.org/10.1002/inf2.12186 |
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