Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2017-11-01
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| Series: | Nanotechnology Reviews |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/ntrev-2017-0155 |