Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures

• Main Authors: John Chelliah Cyril R.A., Swaminathan Rajesh
• Format: Article
• Language: English
• Published: De Gruyter 2017-11-01
• Series: Nanotechnology Reviews
• Subjects: iii–v; channel; gan channel; mosfet; nanostructures; tcad
• Online Access: https://doi.org/10.1515/ntrev-2017-0155

The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.