| Summary: | This study represents a comparison of the border trap behavior and reliability between HfO<sub>2</sub> and ZrO<sub>2</sub> films on <i>n</i>-In<sub>0.53</sub>Ga<sub>0.47</sub>As with an Al<sub>2</sub>O<sub>3</sub> interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N<sub>2</sub>:H<sub>2</sub> mixed FGA passivates the border trap quite well, whereas N<sub>2</sub>-based RTA performs better on interface traps. Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> showed more degradation in terms of the threshold voltage shift while Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> showed higher leakage current behavior. Moreover, Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> showed a higher permittivity, hysteresis, and breakdown field than Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>.
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