| Summary: | In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 µm ZnO:Al, 0.06 µm i-ZnO, 0.04 µm CdS and 3 µm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm−3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature. Keywords: CIGS solar cell, Electrical characteristics, Silvaco-Atlas software
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