Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique

In this paper, a semi-analytical technique known as the Method of Lines (MoL) with uniform and non-uniform discretization schemes is developed. The aim is to determine static potential profile in planar electronic structures. Even though this method has been known for some time, there has been repor...

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Main Authors: Hadj Bourdoucen, Mokrane Dehmas, El-Bachir Yallaoui
Format: Article
Language:English
Published: Sultan Qaboos University 2010-06-01
Series:The Journal of Engineering Research
Subjects:
Online Access:https://journals.squ.edu.om/index.php/tjer/article/view/75
id doaj-e47963d1f0864df198865801fb7db425
record_format Article
spelling doaj-e47963d1f0864df198865801fb7db4252020-11-25T03:25:47ZengSultan Qaboos UniversityThe Journal of Engineering Research1726-60091726-67422010-06-0171626910.24200/tjer.vol7iss1pp62-6975Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical TechniqueHadj Bourdoucen0Mokrane Dehmas1El-Bachir Yallaoui2Communication and Information Research Centre, Sultan Qaboos University, Muscat, Sultanate of Oman Department of Electrical and Computer Engineering, College of Engineering, Sultan Qaboos University, PO Box 33, PC 123, Al-Khoud, Sultanate of OmanUniversity of Boumerdes, Department of Electrical Engineering, 35000, AlgeriaDepartment of Mathematics and Statistics, College of Science, Sultan Qaboos University, PO Box 36, PC 123, Al-Khoud, Sultanate of OmanIn this paper, a semi-analytical technique known as the Method of Lines (MoL) with uniform and non-uniform discretization schemes is developed. The aim is to determine static potential profile in planar electronic structures. Even though this method has been known for some time, there has been reported work on its application to planar semiconductor device analysis for voltage profile determination. Since most current electronic devices are manufactured using planar and quasi-planar technology, the proposed algorithm is well suited for device analysis prior to fabrication. Compared with known popular methods such as Finite Difference and Finite Elements methods, the proposed technique is relatively simple, more accurate and unlike other methods, has no convergence problem. In addition to this, its semi-analytical nature, which consists of reducing one computing dimension, allows saving significant memory and computation time. Typical planar electronic structures are considered to demonstrate their suitability for these devices, and the obtained results are presented and discussed.https://journals.squ.edu.om/index.php/tjer/article/view/75planar structure, method of lines, potential profile, mol
collection DOAJ
language English
format Article
sources DOAJ
author Hadj Bourdoucen
Mokrane Dehmas
El-Bachir Yallaoui
spellingShingle Hadj Bourdoucen
Mokrane Dehmas
El-Bachir Yallaoui
Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
The Journal of Engineering Research
planar structure, method of lines, potential profile, mol
author_facet Hadj Bourdoucen
Mokrane Dehmas
El-Bachir Yallaoui
author_sort Hadj Bourdoucen
title Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
title_short Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
title_full Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
title_fullStr Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
title_full_unstemmed Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
title_sort determination of potential profile in planar electronic structures using a semi-analytical technique
publisher Sultan Qaboos University
series The Journal of Engineering Research
issn 1726-6009
1726-6742
publishDate 2010-06-01
description In this paper, a semi-analytical technique known as the Method of Lines (MoL) with uniform and non-uniform discretization schemes is developed. The aim is to determine static potential profile in planar electronic structures. Even though this method has been known for some time, there has been reported work on its application to planar semiconductor device analysis for voltage profile determination. Since most current electronic devices are manufactured using planar and quasi-planar technology, the proposed algorithm is well suited for device analysis prior to fabrication. Compared with known popular methods such as Finite Difference and Finite Elements methods, the proposed technique is relatively simple, more accurate and unlike other methods, has no convergence problem. In addition to this, its semi-analytical nature, which consists of reducing one computing dimension, allows saving significant memory and computation time. Typical planar electronic structures are considered to demonstrate their suitability for these devices, and the obtained results are presented and discussed.
topic planar structure, method of lines, potential profile, mol
url https://journals.squ.edu.om/index.php/tjer/article/view/75
work_keys_str_mv AT hadjbourdoucen determinationofpotentialprofileinplanarelectronicstructuresusingasemianalyticaltechnique
AT mokranedehmas determinationofpotentialprofileinplanarelectronicstructuresusingasemianalyticaltechnique
AT elbachiryallaoui determinationofpotentialprofileinplanarelectronicstructuresusingasemianalyticaltechnique
_version_ 1724595731414646784