Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique
In this paper, a semi-analytical technique known as the Method of Lines (MoL) with uniform and non-uniform discretization schemes is developed. The aim is to determine static potential profile in planar electronic structures. Even though this method has been known for some time, there has been repor...
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doaj-e47963d1f0864df198865801fb7db4252020-11-25T03:25:47ZengSultan Qaboos UniversityThe Journal of Engineering Research1726-60091726-67422010-06-0171626910.24200/tjer.vol7iss1pp62-6975Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical TechniqueHadj Bourdoucen0Mokrane Dehmas1El-Bachir Yallaoui2Communication and Information Research Centre, Sultan Qaboos University, Muscat, Sultanate of Oman Department of Electrical and Computer Engineering, College of Engineering, Sultan Qaboos University, PO Box 33, PC 123, Al-Khoud, Sultanate of OmanUniversity of Boumerdes, Department of Electrical Engineering, 35000, AlgeriaDepartment of Mathematics and Statistics, College of Science, Sultan Qaboos University, PO Box 36, PC 123, Al-Khoud, Sultanate of OmanIn this paper, a semi-analytical technique known as the Method of Lines (MoL) with uniform and non-uniform discretization schemes is developed. The aim is to determine static potential profile in planar electronic structures. Even though this method has been known for some time, there has been reported work on its application to planar semiconductor device analysis for voltage profile determination. Since most current electronic devices are manufactured using planar and quasi-planar technology, the proposed algorithm is well suited for device analysis prior to fabrication. Compared with known popular methods such as Finite Difference and Finite Elements methods, the proposed technique is relatively simple, more accurate and unlike other methods, has no convergence problem. In addition to this, its semi-analytical nature, which consists of reducing one computing dimension, allows saving significant memory and computation time. Typical planar electronic structures are considered to demonstrate their suitability for these devices, and the obtained results are presented and discussed.https://journals.squ.edu.om/index.php/tjer/article/view/75planar structure, method of lines, potential profile, mol |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hadj Bourdoucen Mokrane Dehmas El-Bachir Yallaoui |
spellingShingle |
Hadj Bourdoucen Mokrane Dehmas El-Bachir Yallaoui Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique The Journal of Engineering Research planar structure, method of lines, potential profile, mol |
author_facet |
Hadj Bourdoucen Mokrane Dehmas El-Bachir Yallaoui |
author_sort |
Hadj Bourdoucen |
title |
Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique |
title_short |
Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique |
title_full |
Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique |
title_fullStr |
Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique |
title_full_unstemmed |
Determination of Potential Profile In Planar Electronic Structures Using A Semi-Analytical Technique |
title_sort |
determination of potential profile in planar electronic structures using a semi-analytical technique |
publisher |
Sultan Qaboos University |
series |
The Journal of Engineering Research |
issn |
1726-6009 1726-6742 |
publishDate |
2010-06-01 |
description |
In this paper, a semi-analytical technique known as the Method of Lines (MoL) with uniform and non-uniform discretization schemes is developed. The aim is to determine static potential profile in planar electronic structures. Even though this method has been known for some time, there has been reported work on its application to planar semiconductor device analysis for voltage profile determination. Since most current electronic devices are manufactured using planar and quasi-planar technology, the proposed algorithm is well suited for device analysis prior to fabrication. Compared with known popular methods such as Finite Difference and Finite Elements methods, the proposed technique is relatively simple, more accurate and unlike other methods, has no convergence problem. In addition to this, its semi-analytical nature, which consists of reducing one computing dimension, allows saving significant memory and computation time. Typical planar electronic structures are considered to demonstrate their suitability for these devices, and the obtained results are presented and discussed. |
topic |
planar structure, method of lines, potential profile, mol |
url |
https://journals.squ.edu.om/index.php/tjer/article/view/75 |
work_keys_str_mv |
AT hadjbourdoucen determinationofpotentialprofileinplanarelectronicstructuresusingasemianalyticaltechnique AT mokranedehmas determinationofpotentialprofileinplanarelectronicstructuresusingasemianalyticaltechnique AT elbachiryallaoui determinationofpotentialprofileinplanarelectronicstructuresusingasemianalyticaltechnique |
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1724595731414646784 |