Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures

The metal-insulator transition (MIT) in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2) has been extensively studied in the last decade because of a sharp, reversible chan...

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Main Authors: Woong-Ki Hong, SeungNam Cha, Jung Inn Sohn, Jong Min Kim
Format: Article
Language:English
Published: Hindawi Limited 2015-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2015/538954
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spelling doaj-e442995a13a748ec9f234ec5e60ca2982020-11-24T21:02:54ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292015-01-01201510.1155/2015/538954538954Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 StructuresWoong-Ki Hong0SeungNam Cha1Jung Inn Sohn2Jong Min Kim3Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Republic of KoreaDepartment of Engineering Science, University of Oxford, Oxford OX1 3PJ, UKDepartment of Engineering Science, University of Oxford, Oxford OX1 3PJ, UKDepartment of Engineering Science, University of Oxford, Oxford OX1 3PJ, UKThe metal-insulator transition (MIT) in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2) has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D) VO2 structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2 structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2 structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.http://dx.doi.org/10.1155/2015/538954
collection DOAJ
language English
format Article
sources DOAJ
author Woong-Ki Hong
SeungNam Cha
Jung Inn Sohn
Jong Min Kim
spellingShingle Woong-Ki Hong
SeungNam Cha
Jung Inn Sohn
Jong Min Kim
Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures
Journal of Nanomaterials
author_facet Woong-Ki Hong
SeungNam Cha
Jung Inn Sohn
Jong Min Kim
author_sort Woong-Ki Hong
title Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures
title_short Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures
title_full Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures
title_fullStr Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures
title_full_unstemmed Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures
title_sort metal-insulator phase transition in quasi-one-dimensional vo2 structures
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2015-01-01
description The metal-insulator transition (MIT) in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2) has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D) VO2 structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2 structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2 structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.
url http://dx.doi.org/10.1155/2015/538954
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