Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In

The band gap controlled photocatalyst (Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>) was prepared via a simple one-step solvothermal method. The effects of doping of Cu<sup>+</sup> and excess In on the photocatalytic ac...

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Main Authors: Ikki Tateishi, Mai Furukawa, Hideyuki Katsumata, Satoshi Kaneco
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Catalysts
Subjects:
Online Access:https://www.mdpi.com/2073-4344/9/8/681
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spelling doaj-e36994a25d5646db81c972ea53416cf02020-11-24T21:21:02ZengMDPI AGCatalysts2073-43442019-08-019868110.3390/catal9080681catal9080681Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and InIkki Tateishi0Mai Furukawa1Hideyuki Katsumata2Satoshi Kaneco3Global Environment Center for Education &amp; Research, Mie University, Mie 514-8507, JapanDepartment of Chemistry for Materials, Graduate School of Engineering, Mie University, Mie 514-8507, JapanDepartment of Chemistry for Materials, Graduate School of Engineering, Mie University, Mie 514-8507, JapanGlobal Environment Center for Education &amp; Research, Mie University, Mie 514-8507, JapanThe band gap controlled photocatalyst (Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>) was prepared via a simple one-step solvothermal method. The effects of doping of Cu<sup>+</sup> and excess In on the photocatalytic activity of ZnIn<sub>2</sub>S<sub>4</sub> photocatalyst were investigated. In addition, optical properties, surface morphology and crystal structure were evaluated. The maximum H<sub>2</sub> evolution rate (2370 &#181;mol h<sup>&#8722;1</sup> g<sup>&#8722;1</sup>) was achieved with Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>, which was about five times higher than that of untreated ZnIn<sub>2</sub>S<sub>4</sub> under visible light (&#955; &#8805; 420 nm). The band gap of Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub> decreased to 1.98 eV by raising the maximum position of the valence band, compared to ZnIn<sub>2</sub>S<sub>4</sub>. Furthermore, the recombination of electron hole pairs was effectively reduced. This research contributes to the development of highly active photocatalysts under visible light.https://www.mdpi.com/2073-4344/9/8/681photocatalytic hydrogen generationcopperindiumZnIn<sub>2</sub>S<sub>4</sub>
collection DOAJ
language English
format Article
sources DOAJ
author Ikki Tateishi
Mai Furukawa
Hideyuki Katsumata
Satoshi Kaneco
spellingShingle Ikki Tateishi
Mai Furukawa
Hideyuki Katsumata
Satoshi Kaneco
Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In
Catalysts
photocatalytic hydrogen generation
copper
indium
ZnIn<sub>2</sub>S<sub>4</sub>
author_facet Ikki Tateishi
Mai Furukawa
Hideyuki Katsumata
Satoshi Kaneco
author_sort Ikki Tateishi
title Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In
title_short Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In
title_full Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In
title_fullStr Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In
title_full_unstemmed Improvement of Photocatalytic H<sub>2</sub>-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn<sub>2</sub>S<sub>4</sub> with Cu and In
title_sort improvement of photocatalytic h<sub>2</sub>-generation under visible light irradiation by controlling the band gap of znin<sub>2</sub>s<sub>4</sub> with cu and in
publisher MDPI AG
series Catalysts
issn 2073-4344
publishDate 2019-08-01
description The band gap controlled photocatalyst (Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>) was prepared via a simple one-step solvothermal method. The effects of doping of Cu<sup>+</sup> and excess In on the photocatalytic activity of ZnIn<sub>2</sub>S<sub>4</sub> photocatalyst were investigated. In addition, optical properties, surface morphology and crystal structure were evaluated. The maximum H<sub>2</sub> evolution rate (2370 &#181;mol h<sup>&#8722;1</sup> g<sup>&#8722;1</sup>) was achieved with Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>, which was about five times higher than that of untreated ZnIn<sub>2</sub>S<sub>4</sub> under visible light (&#955; &#8805; 420 nm). The band gap of Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub> decreased to 1.98 eV by raising the maximum position of the valence band, compared to ZnIn<sub>2</sub>S<sub>4</sub>. Furthermore, the recombination of electron hole pairs was effectively reduced. This research contributes to the development of highly active photocatalysts under visible light.
topic photocatalytic hydrogen generation
copper
indium
ZnIn<sub>2</sub>S<sub>4</sub>
url https://www.mdpi.com/2073-4344/9/8/681
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