| Summary: | The band gap controlled photocatalyst (Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>) was prepared via a simple one-step solvothermal method. The effects of doping of Cu<sup>+</sup> and excess In on the photocatalytic activity of ZnIn<sub>2</sub>S<sub>4</sub> photocatalyst were investigated. In addition, optical properties, surface morphology and crystal structure were evaluated. The maximum H<sub>2</sub> evolution rate (2370 µmol h<sup>−1</sup> g<sup>−1</sup>) was achieved with Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub>, which was about five times higher than that of untreated ZnIn<sub>2</sub>S<sub>4</sub> under visible light (λ ≥ 420 nm). The band gap of Zn<sub>0.74</sub>Cu<sub>0.13</sub>In<sub>2</sub>S<sub>3.805</sub> decreased to 1.98 eV by raising the maximum position of the valence band, compared to ZnIn<sub>2</sub>S<sub>4</sub>. Furthermore, the recombination of electron hole pairs was effectively reduced. This research contributes to the development of highly active photocatalysts under visible light.
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