Silicon single-photon avalanche diodes with nano-structured light trapping

The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this...

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Main Authors:	Kai Zang, Xiao Jiang, Yijie Huo, Xun Ding, Matthew Morea, Xiaochi Chen, Ching-Ying Lu, Jian Ma, Ming Zhou, Zhenyang Xia, Zongfu Yu, Theodore I. Kamins, Qiang Zhang, James S. Harris
Format:	Article
Language:	English
Published:	Nature Publishing Group 2017-09-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-017-00733-y

id	doaj-e365e9eca5ed4f7fb94afb3c499b599b
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spelling	doaj-e365e9eca5ed4f7fb94afb3c499b599b2021-05-11T07:37:55ZengNature Publishing GroupNature Communications2041-17232017-09-01811610.1038/s41467-017-00733-ySilicon single-photon avalanche diodes with nano-structured light trappingKai Zang0Xiao Jiang1Yijie Huo2Xun Ding3Matthew Morea4Xiaochi Chen5Ching-Ying Lu6Jian Ma7Ming Zhou8Zhenyang Xia9Zongfu Yu10Theodore I. Kamins11Qiang Zhang12James S. Harris13Department of Electrical Engineering, Stanford UniversityHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of ChinaDepartment of Electrical Engineering, Stanford UniversityHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of ChinaDepartment of Electrical Engineering, Stanford UniversityDepartment of Electrical Engineering, Stanford UniversityDepartment of Electrical Engineering, Stanford UniversityHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of ChinaDepartment of Electrical and Computer Engineering, University of Wisconsin-MadisonDepartment of Electrical and Computer Engineering, University of Wisconsin-MadisonDepartment of Electrical and Computer Engineering, University of Wisconsin-MadisonDepartment of Electrical Engineering, Stanford UniversityHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of ChinaDepartment of Electrical Engineering, Stanford UniversityThe performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.https://doi.org/10.1038/s41467-017-00733-y
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Kai Zang Xiao Jiang Yijie Huo Xun Ding Matthew Morea Xiaochi Chen Ching-Ying Lu Jian Ma Ming Zhou Zhenyang Xia Zongfu Yu Theodore I. Kamins Qiang Zhang James S. Harris
spellingShingle	Kai Zang Xiao Jiang Yijie Huo Xun Ding Matthew Morea Xiaochi Chen Ching-Ying Lu Jian Ma Ming Zhou Zhenyang Xia Zongfu Yu Theodore I. Kamins Qiang Zhang James S. Harris Silicon single-photon avalanche diodes with nano-structured light trapping Nature Communications
author_facet	Kai Zang Xiao Jiang Yijie Huo Xun Ding Matthew Morea Xiaochi Chen Ching-Ying Lu Jian Ma Ming Zhou Zhenyang Xia Zongfu Yu Theodore I. Kamins Qiang Zhang James S. Harris
author_sort	Kai Zang
title	Silicon single-photon avalanche diodes with nano-structured light trapping
title_short	Silicon single-photon avalanche diodes with nano-structured light trapping
title_full	Silicon single-photon avalanche diodes with nano-structured light trapping
title_fullStr	Silicon single-photon avalanche diodes with nano-structured light trapping
title_full_unstemmed	Silicon single-photon avalanche diodes with nano-structured light trapping
title_sort	silicon single-photon avalanche diodes with nano-structured light trapping
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2017-09-01
description	The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.
url	https://doi.org/10.1038/s41467-017-00733-y
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Silicon single-photon avalanche diodes with nano-structured light trapping

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