Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory

Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory

In this work, we emulate biological synaptic properties such as long-term plasticity (LTP) and short-term plasticity (STP) in an artificial synaptic device with a TiN/TiO<sub>2</sub>/WO<i><sub>x</sub></i>/Pt structure. The graded WO<i><sub>x</sub>...

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Main Authors: Hyojong Cho, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Coatings
Subjects:
short-term plasticity
in-memory computing
resistive switching
X-ray photoelectron spectroscopy
Online Access:https://www.mdpi.com/2079-6412/10/9/908
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spelling doaj-e363f48202854b0bae7f31c3bc9f80d02020-11-25T03:26:02ZengMDPI AGCoatings2079-64122020-09-011090890810.3390/coatings10090908Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching MemoryHyojong Cho0Sungjun Kim1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaIn this work, we emulate biological synaptic properties such as long-term plasticity (LTP) and short-term plasticity (STP) in an artificial synaptic device with a TiN/TiO<sub>2</sub>/WO<i><sub>x</sub></i>/Pt structure. The graded WO<i><sub>x</sub></i> layer with oxygen vacancies is confirmed via X-ray photoelectron spectroscopy (XPS) analysis. The control TiN/WO<i><sub>x</sub></i>/Pt device shows filamentary switching with abrupt set and gradual reset processes in DC sweep mode. The TiN/WO<i><sub>x</sub></i>/Pt device is vulnerable to set stuck because of negative set behavior, as verified by both DC sweep and pulse modes. The TiN/WO<i><sub>x</sub></i>/Pt device has good retention and can mimic long-term memory (LTM), including potentiation and depression, given repeated pulses. On the other hand, TiN/TiO<sub>2</sub>/WO<i><sub>x</sub></i>/Pt devices show non-filamentary type switching that is suitable for fine conductance modulation. Potentiation and depression are demonstrated in the TiN/TiO<sub>2</sub> (2 nm)/WO<i><sub>x</sub></i>/Pt device with moderate conductance decay by application of identical repeated pulses. Short-term memory (STM) is demonstrated by varying the interval time of pulse inputs for the TiN/TiO<sub>2</sub> (6 nm)/WO<i><sub>x</sub></i>/Pt device with a quick decay in conductance.https://www.mdpi.com/2079-6412/10/9/908short-term plasticityin-memory computingresistive switchingX-ray photoelectron spectroscopy
collection DOAJ
language English
format Article
sources DOAJ
author Hyojong Cho
Sungjun Kim
spellingShingle Hyojong Cho
Sungjun Kim
Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory
Coatings
short-term plasticity
in-memory computing
resistive switching
X-ray photoelectron spectroscopy
author_facet Hyojong Cho
Sungjun Kim
author_sort Hyojong Cho
title Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory
title_short Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory
title_full Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory
title_fullStr Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory
title_full_unstemmed Enhancing Short-Term Plasticity by Inserting a Thin TiO<sub>2</sub> Layer in WO<i><sub>x</sub></i>-Based Resistive Switching Memory
title_sort enhancing short-term plasticity by inserting a thin tio<sub>2</sub> layer in wo<i><sub>x</sub></i>-based resistive switching memory
publisher MDPI AG
series Coatings
issn 2079-6412
publishDate 2020-09-01
description In this work, we emulate biological synaptic properties such as long-term plasticity (LTP) and short-term plasticity (STP) in an artificial synaptic device with a TiN/TiO<sub>2</sub>/WO<i><sub>x</sub></i>/Pt structure. The graded WO<i><sub>x</sub></i> layer with oxygen vacancies is confirmed via X-ray photoelectron spectroscopy (XPS) analysis. The control TiN/WO<i><sub>x</sub></i>/Pt device shows filamentary switching with abrupt set and gradual reset processes in DC sweep mode. The TiN/WO<i><sub>x</sub></i>/Pt device is vulnerable to set stuck because of negative set behavior, as verified by both DC sweep and pulse modes. The TiN/WO<i><sub>x</sub></i>/Pt device has good retention and can mimic long-term memory (LTM), including potentiation and depression, given repeated pulses. On the other hand, TiN/TiO<sub>2</sub>/WO<i><sub>x</sub></i>/Pt devices show non-filamentary type switching that is suitable for fine conductance modulation. Potentiation and depression are demonstrated in the TiN/TiO<sub>2</sub> (2 nm)/WO<i><sub>x</sub></i>/Pt device with moderate conductance decay by application of identical repeated pulses. Short-term memory (STM) is demonstrated by varying the interval time of pulse inputs for the TiN/TiO<sub>2</sub> (6 nm)/WO<i><sub>x</sub></i>/Pt device with a quick decay in conductance.
topic short-term plasticity
in-memory computing
resistive switching
X-ray photoelectron spectroscopy
url https://www.mdpi.com/2079-6412/10/9/908
work_keys_str_mv AT hyojongcho enhancingshorttermplasticitybyinsertingathintiosub2sublayerinwoisubxsubibasedresistiveswitchingmemory
AT sungjunkim enhancingshorttermplasticitybyinsertingathintiosub2sublayerinwoisubxsubibasedresistiveswitchingmemory
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