Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
Abstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal is proposed. For the realization of the Toffoli gate, t...
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Online Access: | https://doi.org/10.1049/ote2.12029 |
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doaj-e3207cd797584b139797b73cd35d654f2021-08-02T08:25:50ZengWileyIET Optoelectronics1751-87681751-87762021-06-0115313914810.1049/ote2.12029Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystalParomita De0Sapana Ranwa1Sourangshu Mukhopadhyay2Department of Electronics and Communication Engineering National Institute of Technology Durgapur West Bengal IndiaDepartment of Electronics and Communication Engineering National Institute of Technology Durgapur West Bengal IndiaDepartment of Physics University of Burdwan Burdwan West Bengal IndiaAbstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal is proposed. For the realization of the Toffoli gate, the principles of constructive and destructive interference of light are used. The Toffoli gate comprises two‐input–three‐output‐based optical AND gate, and a two‐input–one‐output optical XOR gate. Two Y junction power splitters have been used at the two inputs of the AND gate. The operating wavelength of the proposed Toffoli gate is 1550 nm along with the wafer size of 50 µm × 50 µm. The performance of the Toffoli gate has been analysed and simulated by the plane‐wave expansion method and finite‐difference time‐domain method. The response time and contrast ratios are also obtained from the simulation. The proposed Toffoli gate is intensity encoded with no non‐linear material within the crystal which shows significant improvement over other proposals.https://doi.org/10.1049/ote2.12029 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Paromita De Sapana Ranwa Sourangshu Mukhopadhyay |
spellingShingle |
Paromita De Sapana Ranwa Sourangshu Mukhopadhyay Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal IET Optoelectronics |
author_facet |
Paromita De Sapana Ranwa Sourangshu Mukhopadhyay |
author_sort |
Paromita De |
title |
Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal |
title_short |
Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal |
title_full |
Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal |
title_fullStr |
Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal |
title_full_unstemmed |
Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal |
title_sort |
implementation of all‐optical toffoli gate by 2d si–air photonic crystal |
publisher |
Wiley |
series |
IET Optoelectronics |
issn |
1751-8768 1751-8776 |
publishDate |
2021-06-01 |
description |
Abstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal is proposed. For the realization of the Toffoli gate, the principles of constructive and destructive interference of light are used. The Toffoli gate comprises two‐input–three‐output‐based optical AND gate, and a two‐input–one‐output optical XOR gate. Two Y junction power splitters have been used at the two inputs of the AND gate. The operating wavelength of the proposed Toffoli gate is 1550 nm along with the wafer size of 50 µm × 50 µm. The performance of the Toffoli gate has been analysed and simulated by the plane‐wave expansion method and finite‐difference time‐domain method. The response time and contrast ratios are also obtained from the simulation. The proposed Toffoli gate is intensity encoded with no non‐linear material within the crystal which shows significant improvement over other proposals. |
url |
https://doi.org/10.1049/ote2.12029 |
work_keys_str_mv |
AT paromitade implementationofallopticaltoffoligateby2dsiairphotoniccrystal AT sapanaranwa implementationofallopticaltoffoligateby2dsiairphotoniccrystal AT sourangshumukhopadhyay implementationofallopticaltoffoligateby2dsiairphotoniccrystal |
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