Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal

Abstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal is proposed. For the realization of the Toffoli gate, t...

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Main Authors: Paromita De, Sapana Ranwa, Sourangshu Mukhopadhyay
Format: Article
Language:English
Published: Wiley 2021-06-01
Series:IET Optoelectronics
Online Access:https://doi.org/10.1049/ote2.12029
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spelling doaj-e3207cd797584b139797b73cd35d654f2021-08-02T08:25:50ZengWileyIET Optoelectronics1751-87681751-87762021-06-0115313914810.1049/ote2.12029Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystalParomita De0Sapana Ranwa1Sourangshu Mukhopadhyay2Department of Electronics and Communication Engineering National Institute of Technology Durgapur West Bengal IndiaDepartment of Electronics and Communication Engineering National Institute of Technology Durgapur West Bengal IndiaDepartment of Physics University of Burdwan Burdwan West Bengal IndiaAbstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal is proposed. For the realization of the Toffoli gate, the principles of constructive and destructive interference of light are used. The Toffoli gate comprises two‐input–three‐output‐based optical AND gate, and a two‐input–one‐output optical XOR gate. Two Y junction power splitters have been used at the two inputs of the AND gate. The operating wavelength of the proposed Toffoli gate is 1550 nm along with the wafer size of 50 µm × 50 µm. The performance of the Toffoli gate has been analysed and simulated by the plane‐wave expansion method and finite‐difference time‐domain method. The response time and contrast ratios are also obtained from the simulation. The proposed Toffoli gate is intensity encoded with no non‐linear material within the crystal which shows significant improvement over other proposals.https://doi.org/10.1049/ote2.12029
collection DOAJ
language English
format Article
sources DOAJ
author Paromita De
Sapana Ranwa
Sourangshu Mukhopadhyay
spellingShingle Paromita De
Sapana Ranwa
Sourangshu Mukhopadhyay
Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
IET Optoelectronics
author_facet Paromita De
Sapana Ranwa
Sourangshu Mukhopadhyay
author_sort Paromita De
title Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
title_short Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
title_full Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
title_fullStr Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
title_full_unstemmed Implementation of all‐optical Toffoli gate by 2D Si–air photonic crystal
title_sort implementation of all‐optical toffoli gate by 2d si–air photonic crystal
publisher Wiley
series IET Optoelectronics
issn 1751-8768
1751-8776
publishDate 2021-06-01
description Abstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal is proposed. For the realization of the Toffoli gate, the principles of constructive and destructive interference of light are used. The Toffoli gate comprises two‐input–three‐output‐based optical AND gate, and a two‐input–one‐output optical XOR gate. Two Y junction power splitters have been used at the two inputs of the AND gate. The operating wavelength of the proposed Toffoli gate is 1550 nm along with the wafer size of 50 µm × 50 µm. The performance of the Toffoli gate has been analysed and simulated by the plane‐wave expansion method and finite‐difference time‐domain method. The response time and contrast ratios are also obtained from the simulation. The proposed Toffoli gate is intensity encoded with no non‐linear material within the crystal which shows significant improvement over other proposals.
url https://doi.org/10.1049/ote2.12029
work_keys_str_mv AT paromitade implementationofallopticaltoffoligateby2dsiairphotoniccrystal
AT sapanaranwa implementationofallopticaltoffoligateby2dsiairphotoniccrystal
AT sourangshumukhopadhyay implementationofallopticaltoffoligateby2dsiairphotoniccrystal
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