Disorder enabled band structure engineering of a topological insulator surface
The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurit...
Main Authors: | Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2017-02-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms14081 |
Similar Items
-
Disorder enabled band structure engineering of a topological insulator surface
by: Xu, Yishuai, et al.
Published: (2017) -
Observation of a topological insulator Dirac cone reshaped by non-magnetic impurity resonance
by: Miao, Lin, et al.
Published: (2019) -
Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator
by: Kotta, Erica, et al.
Published: (2020) -
Selective scattering between Floquet-Bloch and Volkov states in a topological insulator
by: Mahmood, Fahad, et al.
Published: (2017) -
Probing the topology in band insulators
by: Chen, Kuang-Ting, Ph. D. Massachusetts Institute of Technology
Published: (2013)