Disorder enabled band structure engineering of a topological insulator surface

The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurit...

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Main Authors:	Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray
Format:	Article
Language:	English
Published:	Nature Publishing Group 2017-02-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms14081

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spelling	doaj-e30e90bab03e438b8fbd921e2ecf34382021-05-11T07:27:02ZengNature Publishing GroupNature Communications2041-17232017-02-01811710.1038/ncomms14081Disorder enabled band structure engineering of a topological insulator surfaceYishuai Xu0Janet Chiu1Lin Miao2Haowei He3Zhanybek Alpichshev4A. Kapitulnik5Rudro R. Biswas6L. Andrew Wray7Department of Physics, New York UniversityDepartment of Physics, New York UniversityDepartment of Physics, New York UniversityDepartment of Physics, New York UniversityDepartment of Physics, Massachusetts Institute of TechnologyDepartment of Physics, Stanford UniversityDepartment of Physics and Astronomy, Purdue UniversityDepartment of Physics, New York UniversityThe surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurity bands.https://doi.org/10.1038/ncomms14081
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Yishuai Xu Janet Chiu Lin Miao Haowei He Zhanybek Alpichshev A. Kapitulnik Rudro R. Biswas L. Andrew Wray
spellingShingle	Yishuai Xu Janet Chiu Lin Miao Haowei He Zhanybek Alpichshev A. Kapitulnik Rudro R. Biswas L. Andrew Wray Disorder enabled band structure engineering of a topological insulator surface Nature Communications
author_facet	Yishuai Xu Janet Chiu Lin Miao Haowei He Zhanybek Alpichshev A. Kapitulnik Rudro R. Biswas L. Andrew Wray
author_sort	Yishuai Xu
title	Disorder enabled band structure engineering of a topological insulator surface
title_short	Disorder enabled band structure engineering of a topological insulator surface
title_full	Disorder enabled band structure engineering of a topological insulator surface
title_fullStr	Disorder enabled band structure engineering of a topological insulator surface
title_full_unstemmed	Disorder enabled band structure engineering of a topological insulator surface
title_sort	disorder enabled band structure engineering of a topological insulator surface
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2017-02-01
description	The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurity bands.
url	https://doi.org/10.1038/ncomms14081
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Disorder enabled band structure engineering of a topological insulator surface

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