Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous

Processing layer-dependent direct band gap and good absorption coefficient especially in the mid-infrared band, black phosphorous is believed to make a contribution superior to that of graphene in broadband photodetectors. The narrow band gap of 0.3 eV for bulk black phosphorous helps to absorb infr...

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Main Authors: Qi Han, Yadong Jiang, Jiayue Han, Xiang Dong, Jun Gou
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-09-01
Series:Frontiers in Physics
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2021.710150/full
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spelling doaj-e304d835cb1147d9bbf74bef024927f92021-09-16T14:48:18ZengFrontiers Media S.A.Frontiers in Physics2296-424X2021-09-01910.3389/fphy.2021.710150710150Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black PhosphorousQi Han0Yadong Jiang1Yadong Jiang2Jiayue Han3Xiang Dong4Jun Gou5Jun Gou6School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaProcessing layer-dependent direct band gap and good absorption coefficient especially in the mid-infrared band, black phosphorous is believed to make a contribution superior to that of graphene in broadband photodetectors. The narrow band gap of 0.3 eV for bulk black phosphorous helps to absorb infrared radiation while a relatively large dark current under zero gate voltage is inevitable. Few layer black phosphorous sheets with asymmetrical thickness sealed in an insulator for protection is designed and explored for photosensitive mechanism in this work. Saturable absorption dominates the light harvesting process in visible light detection and thus limits maximum photocurrent to 3.3 and 1.4 μA for 520 and 650 nm lasers with a dark current of 0.7 μA. While in near-infrared wavelength, a responsivity of 0.12 A/W is inducted for 808 nm free of adsorption saturation even if the incident power is increased to 200 mW/cm2. Discrimination for the origin of the photo-response in short wavelength is conducted and the abnormal negative and nearly constant photocurrent in mid-infrared, irrelevant to inhomogeneous thickness, reveals the photothermal effect in a black phosphorous sheet. This work unravels various photoelectric features in black phosphorous and paves the way to designing more outstanding broadband photodetectors based on black phosphorous.https://www.frontiersin.org/articles/10.3389/fphy.2021.710150/fullblack phosphorousmid-infraredbroadbandsaturable absorptionhomogeneous junction
collection DOAJ
language English
format Article
sources DOAJ
author Qi Han
Yadong Jiang
Yadong Jiang
Jiayue Han
Xiang Dong
Jun Gou
Jun Gou
spellingShingle Qi Han
Yadong Jiang
Yadong Jiang
Jiayue Han
Xiang Dong
Jun Gou
Jun Gou
Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous
Frontiers in Physics
black phosphorous
mid-infrared
broadband
saturable absorption
homogeneous junction
author_facet Qi Han
Yadong Jiang
Yadong Jiang
Jiayue Han
Xiang Dong
Jun Gou
Jun Gou
author_sort Qi Han
title Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous
title_short Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous
title_full Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous
title_fullStr Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous
title_full_unstemmed Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous
title_sort visible to mid-infrared waveband photodetector based on insulator capped asymmetry black phosphorous
publisher Frontiers Media S.A.
series Frontiers in Physics
issn 2296-424X
publishDate 2021-09-01
description Processing layer-dependent direct band gap and good absorption coefficient especially in the mid-infrared band, black phosphorous is believed to make a contribution superior to that of graphene in broadband photodetectors. The narrow band gap of 0.3 eV for bulk black phosphorous helps to absorb infrared radiation while a relatively large dark current under zero gate voltage is inevitable. Few layer black phosphorous sheets with asymmetrical thickness sealed in an insulator for protection is designed and explored for photosensitive mechanism in this work. Saturable absorption dominates the light harvesting process in visible light detection and thus limits maximum photocurrent to 3.3 and 1.4 μA for 520 and 650 nm lasers with a dark current of 0.7 μA. While in near-infrared wavelength, a responsivity of 0.12 A/W is inducted for 808 nm free of adsorption saturation even if the incident power is increased to 200 mW/cm2. Discrimination for the origin of the photo-response in short wavelength is conducted and the abnormal negative and nearly constant photocurrent in mid-infrared, irrelevant to inhomogeneous thickness, reveals the photothermal effect in a black phosphorous sheet. This work unravels various photoelectric features in black phosphorous and paves the way to designing more outstanding broadband photodetectors based on black phosphorous.
topic black phosphorous
mid-infrared
broadband
saturable absorption
homogeneous junction
url https://www.frontiersin.org/articles/10.3389/fphy.2021.710150/full
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AT jiayuehan visibletomidinfraredwavebandphotodetectorbasedoninsulatorcappedasymmetryblackphosphorous
AT xiangdong visibletomidinfraredwavebandphotodetectorbasedoninsulatorcappedasymmetryblackphosphorous
AT jungou visibletomidinfraredwavebandphotodetectorbasedoninsulatorcappedasymmetryblackphosphorous
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