High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology

E-beam lithography has been used for reliable and versatile fabrication of sub-15 nm single-crystal gold nanoarrays and led to convincing applications in nanotechnology. However, so far this technique was either too slow for centimeter to wafer-scale writing or fast enough with the so-called dot on...

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Main Authors: Jorge Trasobares, François Vaurette, Marc François, Hans Romijn, Jean-Louis Codron, Dominique Vuillaume, Didier Théron, Nicolas Clément
Format: Article
Language:English
Published: Beilstein-Institut 2014-10-01
Series:Beilstein Journal of Nanotechnology
Subjects:
XPS
Online Access:https://doi.org/10.3762/bjnano.5.202
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spelling doaj-e24d71ff1d2f48e9898b556af1a6834f2020-11-25T02:46:37ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862014-10-01511918192510.3762/bjnano.5.2022190-4286-5-202High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnologyJorge Trasobares0François Vaurette1Marc François2Hans Romijn3Jean-Louis Codron4Dominique Vuillaume5Didier Théron6Nicolas Clément7Institut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceInstitut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceInstitut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceVistec Lithography BV, De Dintel 27a, 5684 PS Best, The NetherlandsInstitut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceInstitut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceInstitut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceInstitut d’Electronique Microélectronique et Nanotechnologie (IEMN) CNRS, Avenue Poincaré, 59652, Villeneuve d’Ascq, FranceE-beam lithography has been used for reliable and versatile fabrication of sub-15 nm single-crystal gold nanoarrays and led to convincing applications in nanotechnology. However, so far this technique was either too slow for centimeter to wafer-scale writing or fast enough with the so-called dot on the fly (DOTF) technique but not optimized for sub-15 nm dots dimension. This prevents use of this technology for some applications and characterization techniques. Here, we show that the DOTF technique can be used without degradation in dots dimension. In addition, we propose two other techniques. The first one is an advanced conventional technique that goes five times faster than the conventional one. The second one relies on sequences defined before writing which enable versatility in e-beam patterns compared to the DOTF technique with same writing speed. By comparing the four different techniques, we evidence the limiting parameters for the writing speed. Wafer-scale fabrication of such arrays with 50 nm pitch allowed XPS analysis of a ferrocenylalkyl thiol self-assembled monolayer coated gold nanoarray.https://doi.org/10.3762/bjnano.5.202gold nanodotgold nanoparticlehigh-speed e-beam lithographymolecular electronicsnanoarrayself-assembled monolayersXPS
collection DOAJ
language English
format Article
sources DOAJ
author Jorge Trasobares
François Vaurette
Marc François
Hans Romijn
Jean-Louis Codron
Dominique Vuillaume
Didier Théron
Nicolas Clément
spellingShingle Jorge Trasobares
François Vaurette
Marc François
Hans Romijn
Jean-Louis Codron
Dominique Vuillaume
Didier Théron
Nicolas Clément
High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
Beilstein Journal of Nanotechnology
gold nanodot
gold nanoparticle
high-speed e-beam lithography
molecular electronics
nanoarray
self-assembled monolayers
XPS
author_facet Jorge Trasobares
François Vaurette
Marc François
Hans Romijn
Jean-Louis Codron
Dominique Vuillaume
Didier Théron
Nicolas Clément
author_sort Jorge Trasobares
title High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
title_short High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
title_full High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
title_fullStr High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
title_full_unstemmed High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
title_sort high speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology
publisher Beilstein-Institut
series Beilstein Journal of Nanotechnology
issn 2190-4286
publishDate 2014-10-01
description E-beam lithography has been used for reliable and versatile fabrication of sub-15 nm single-crystal gold nanoarrays and led to convincing applications in nanotechnology. However, so far this technique was either too slow for centimeter to wafer-scale writing or fast enough with the so-called dot on the fly (DOTF) technique but not optimized for sub-15 nm dots dimension. This prevents use of this technology for some applications and characterization techniques. Here, we show that the DOTF technique can be used without degradation in dots dimension. In addition, we propose two other techniques. The first one is an advanced conventional technique that goes five times faster than the conventional one. The second one relies on sequences defined before writing which enable versatility in e-beam patterns compared to the DOTF technique with same writing speed. By comparing the four different techniques, we evidence the limiting parameters for the writing speed. Wafer-scale fabrication of such arrays with 50 nm pitch allowed XPS analysis of a ferrocenylalkyl thiol self-assembled monolayer coated gold nanoarray.
topic gold nanodot
gold nanoparticle
high-speed e-beam lithography
molecular electronics
nanoarray
self-assembled monolayers
XPS
url https://doi.org/10.3762/bjnano.5.202
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