A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System

A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System

This paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to...

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Bibliographic Details
Main Authors: Jorge Pérez-Bailón, Alejandro Márquez, Belén Calvo, Nicolás Medrano
Format: Article
Language:English
Published: MDPI AG 2018-05-01
Series:Sensors
Subjects:
CMOS analog integrated circuits
low dropout regulator (LDO)
impedance spectroscopy
sensor array
Online Access:http://www.mdpi.com/1424-8220/18/5/1405
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spelling doaj-e192fc88ce9d4419a211a4df4a0689452020-11-24T20:49:03ZengMDPI AGSensors1424-82202018-05-01185140510.3390/s18051405s18051405A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement SystemJorge Pérez-Bailón0Alejandro Márquez1Belén Calvo2Nicolás Medrano3Group of Electronic Design, Aragon Institute for Engineering Research, I3A, University of Zaragoza, 50009 Zaragoza, SpainGroup of Electronic Design, Aragon Institute for Engineering Research, I3A, University of Zaragoza, 50009 Zaragoza, SpainGroup of Electronic Design, Aragon Institute for Engineering Research, I3A, University of Zaragoza, 50009 Zaragoza, SpainGroup of Electronic Design, Aragon Institute for Engineering Research, I3A, University of Zaragoza, 50009 Zaragoza, SpainThis paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to 1.94 V battery voltage over a −40 °C to 100 °C temperature range, with a compact topology (<0.10 mm2 area) and a constant quiescent current of only 7.45 μA with 99.985% current efficiency, achieving remarkable state-of-art Figures of Merit (FoMs) for the regulating–transient performance. Experimental measurements validate its suitability for the target application, paving the way towards the future achievement of a truly portable System on Chip (SoC) platform for impedance sensors.http://www.mdpi.com/1424-8220/18/5/1405CMOS analog integrated circuitslow dropout regulator (LDO)impedance spectroscopysensor array
collection DOAJ
language English
format Article
sources DOAJ
author Jorge Pérez-Bailón
Alejandro Márquez
Belén Calvo
Nicolás Medrano
spellingShingle Jorge Pérez-Bailón
Alejandro Márquez
Belén Calvo
Nicolás Medrano
A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System
Sensors
CMOS analog integrated circuits
low dropout regulator (LDO)
impedance spectroscopy
sensor array
author_facet Jorge Pérez-Bailón
Alejandro Márquez
Belén Calvo
Nicolás Medrano
author_sort Jorge Pérez-Bailón
title A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System
title_short A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System
title_full A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System
title_fullStr A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System
title_full_unstemmed A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System
title_sort 0.18 μm cmos ldo regulator for an on-chip sensor array impedance measurement system
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2018-05-01
description This paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to 1.94 V battery voltage over a −40 °C to 100 °C temperature range, with a compact topology (<0.10 mm2 area) and a constant quiescent current of only 7.45 μA with 99.985% current efficiency, achieving remarkable state-of-art Figures of Merit (FoMs) for the regulating–transient performance. Experimental measurements validate its suitability for the target application, paving the way towards the future achievement of a truly portable System on Chip (SoC) platform for impedance sensors.
topic CMOS analog integrated circuits
low dropout regulator (LDO)
impedance spectroscopy
sensor array
url http://www.mdpi.com/1424-8220/18/5/1405
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