ELLIPSOMETRIC METHODS FOR CONTROL OF PARAMETERS OF MATERIALS AND RADIOELECTRONICS STRUCTURES
The possibilities of ellipsometric method for optimization of identification of refractive index of oxynitride dielectric films have been reviewed, the possibility of ellipsometry for identification of the thickness and optical constants of metal films and semiconductor compound FeSi2.
Main Authors: | S. Bogolyubovа, E. Polyakova, R. Rezvyi |
---|---|
Format: | Article |
Language: | English |
Published: |
CRI «Electronics»
2016-09-01
|
Series: | Радиопромышленность |
Subjects: | |
Online Access: | https://www.radioprom.org/jour/article/view/153 |
Similar Items
-
THE INVESTIGATION OF THICKNESS DEPENDENCES OF REFRACTIVE INDEX FOR NANOSIZED ETHANOL FILM BY ELLIPSOMETRIC METHOD
by: D.A. Kim, et al.
Published: (2012-12-01) -
ELLIPSOMETRIC STUDY OF SEMITRANSPARENT SILVER LAYERS DEPOSITED ON GLASS
by: Víctor Toranzos, et al.
Published: (2014-12-01) -
THE INVESTIGATION OF NANOSIZED SILICON DIOXIDE FILM STRUCTURES BY ELLIPSOMETRIC METHOD
by: D.A. Kim, et al.
Published: (2011-12-01) -
The Determination of the Electronic Parameters of Thin Amorphous Organic Films by Ellipsometric and Spectrophotometric Study
by: Natalia Nosidlak, et al.
Published: (2020-10-01) -
Changes in Optical Parameters of SiO<sub>2</sub>:TiO<sub>2</sub> Films Obtained by Sol-Gel Method Observed as a Result of Thermal Treatment
by: Jacek Nizioł, et al.
Published: (2021-04-01)