A 6-Bit Ku Band Digital Step Attenuator with Low Phase Variation in 0.13-μm SiGe BiCMOS
A 6-bit Ku band digital step attenuator with low phase variation is presented in this paper. The attenuator is designed with 0.13-μm SiGe BiCMOS process technology using triple well isolation N-Metal-Oxide-Semiconductor (TWNMOS) and through-silicon-via (TSV). TWNMOS is mainly used to improv...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/10/1149 |