A 6-Bit Ku Band Digital Step Attenuator with Low Phase Variation in 0.13-μm SiGe BiCMOS

A 6-Bit Ku Band Digital Step Attenuator with Low Phase Variation in 0.13-μm SiGe BiCMOS

A 6-bit Ku band digital step attenuator with low phase variation is presented in this paper. The attenuator is designed with 0.13-μm SiGe BiCMOS process technology using triple well isolation N-Metal-Oxide-Semiconductor (TWNMOS) and through-silicon-via (TSV). TWNMOS is mainly used to improv...

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Bibliographic Details
Main Authors: Lei Luo, Zhiqun Li, Yan Yao, Guoxiao Cheng
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Electronics
Subjects:
digital step attenuator
low phase variation
triple well isolation nmos
wideband
cmos integrated circuits
Online Access:https://www.mdpi.com/2079-9292/8/10/1149

Internet

https://www.mdpi.com/2079-9292/8/10/1149

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