TEM and STEM Studies on the Cross-sectional Morphologies of Dual-/Tri-layer Broadband SiO2 Antireflective Films

• Main Authors: Shuangyue Wang, Hongwei Yan, Dengji Li, Liang Qiao, Shaobo Han, Xiaodong Yuan, Wei Liu, Xia Xiang, Xiaotao Zu
• Format: Article
• Language: English
• Published: SpringerOpen 2018-02-01
• Series: Nanoscale Research Letters
• Subjects: Sol–gel process; Antireflective film; TEM; STEM; Density ratio
• Online Access: http://link.springer.com/article/10.1186/s11671-018-2442-4

Abstract Dual-layer and tri-layer broadband antireflective (AR) films with excellent transmittance were successfully fabricated using base-/acid-catalyzed mixed sols and propylene oxide (PO) modified silica sols. The sols and films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), nuclear magnetic resonance (NMR), transmission electron microscope (TEM), and scanning transmission electron microscope (STEM). FTIR and TEM results suggest that the PO molecules were covalently bonded to the silica particles and the bridge structure existing in PO modified silica sol is responsible for the low density of the top layer. The density ratio between different layers was measured by cross-sectional STEM, and the results are 1.69:1 and 2.1:1.7:1 from bottom-layer to top-layer for dual-layer and tri-layer films, respectively. The dual-layer film demonstrates good stability with 99.8% at the central wavelength of 351 nm and nearly 99.5% at the central wavelength of 1053 nm in laser system, and for the tri-layer AR film, the maximum transmittance reached nearly 100% at both the central wavelengths of 527 and 1053 nm.