The Effect of Grain Boundaries on Schottky Diode Parameters
The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate tha...
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| Format: | Article |
| Language: | Arabic |
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College of Science for Women, University of Baghdad
2004-06-01
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| Series: | Baghdad Science Journal |
| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/556 |
| Summary: | The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate that the type of angles between boundaries has a significant effect on diodes parameters while the boundary lengths per unit area has less effect. The mechanism of Al-interaction with grain boundaries and their intersecting points at different temperature were also studies. The X-ray fluorescence spectrometry has been used for detection of diffused A1%. |
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| ISSN: | 2078-8665 2411-7986 |