Chemical deposition from gas phase of the hetero and nanostructures of III–V compounds

• Main Authors: Voronin V. A., Guba S. K., Kurilo I. V.
• Format: Article
• Language: English
• Published: Politehperiodika 2008-10-01
• Series: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
• Subjects: chloride-hydride epitaxy; heterostructure; nanostructure; compounds III–V; uniflow horizontal reactor
• Online Access: http://www.tkea.com.ua/tkea/2008/5_2008/pdf/06.zip

This is a report of experimental result in-situ metod UV-Spectroscopy on the gas phase composition in the source region GaAs, GaP, In, Ga, In/Ga of gas-flov reactor. The kinetics of individual reactions was determined for a wide range of flow rates and temperatures. The received experimental data were used to analyze the epilayers deposition of GaAs:Bi, GaAs1–хPх, In1–хGaхAs, InхGa1–хAsуP1–у, by the low temperature Isothermal Vapor Phase Epitaxy (I-VPE) method. The analysis of processes taking place in a zone of a source is necessary to understand the influence of such technological parameters as temperature, gas flow rate of the carrier, entering concentrations of components on composition and formation rate of supersaturated gas phase the low temperature growth getero nanostruction GaAs, GaAs1–хPх, In1–хGaхAs, InхGa1–хAsуP1–у.