Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe

Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe

<p><span>We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga<...

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Bibliographic Details
Main Authors:	V. M. Katerynchuk, B. V. Kushnir, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk, O. S. Litvin
Format:	Article
Language:	English
Published:	Vasyl Stefanyk Precarpathian National University 2017-09-01
Series:	Фізика і хімія твердого тіла
Online Access:	http://journals.pu.if.ua/index.php/pcss/article/view/1232

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