Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
<p><span>We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga<...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2017-09-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/1232 |
| Summary: | <p><span>We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga<sub>2</sub>O<sub>3</sub> on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0.74 - 1.0 µm. </span><strong><br /></strong></p><p><strong>Key words: </strong><span>InSe, GaTe, layered crystals, heterojunction, AFM-images spectral characteristics.</span></p> |
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| ISSN: | 1729-4428 2309-8589 |