A FinFET with one atomic layer channel

FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.

Bibliographic Details
Main Authors: Mao-Lin Chen, Xingdan Sun, Hang Liu, Hanwen Wang, Qianbing Zhu, Shasha Wang, Haifeng Du, Baojuan Dong, Jing Zhang, Yun Sun, Song Qiu, Thomas Alava, Song Liu, Dong-Ming Sun, Zheng Han
Format: Article
Language:English
Published: Nature Publishing Group 2020-03-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-15096-0

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