A FinFET with one atomic layer channel
FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.
Bibliographic Details
| Main Authors: |
Mao-Lin Chen,
Xingdan Sun,
Hang Liu,
Hanwen Wang,
Qianbing Zhu,
Shasha Wang,
Haifeng Du,
Baojuan Dong,
Jing Zhang,
Yun Sun,
Song Qiu,
Thomas Alava,
Song Liu,
Dong-Ming Sun,
Zheng Han |
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| Format: | Article
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| Language: | English |
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| Published: |
Nature Publishing Group
2020-03-01
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| Series: | Nature Communications
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| Online Access: | https://doi.org/10.1038/s41467-020-15096-0
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