Differential Equations of Ideal Memristors

• Main Authors: Z. Biolek, D. Biolek, V. Biolkova
• Format: Article
• Language: English
• Published: Spolecnost pro radioelektronicke inzenyrstvi 2015-06-01
• Series: Radioengineering
• Subjects: Memristor; differential equation; parameter-vs-state- map (PSM)
• Online Access: http://www.radioeng.cz/fulltexts/2015/15_02_0369_0377.pdf

Ideal memristor is a resistor with a memory, which adds dynamics to its behavior. The most usual characteristics describing this dynamics are the constitutive relation (i.e. the relation between flux and charge), or Parameter-vs-state- map (PSM), mostly represented by the memristance-to-charge dependence. One of the so far unheeded tools for memristor description is its differential equation (DEM), composed exclusively of instantaneous values of voltage, current, and their derivatives. The article derives a general form of DEM that holds for any ideal memristor and shows that it is always a nonlinear equation of the first order; the PSM forms are found for memristors which are governed by DEMs of the Bernoulli and the Riccati types; a classification of memristors according to the type of their dynamics with respect to voltage and current is carried out.