Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface...

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Main Authors:	Jinxing Wu, Peixian Li, Shengrui Xu, Xiaowei Zhou, Hongchang Tao, Wenkai Yue, Yanli Wang, Jiangtao Wu, Yachao Zhang, Yue Hao
Format:	Article
Language:	English
Published:	MDPI AG 2020-11-01
Series:	Materials
Subjects:	h-BN sapphire magnetron sputtered AlN GaN
Online Access:	https://www.mdpi.com/1996-1944/13/22/5118

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spelling	doaj-df53431801b248d48325e42d3a2b522b2020-11-25T04:07:00ZengMDPI AGMaterials1996-19442020-11-01135118511810.3390/ma13225118Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire SubstratesJinxing Wu0Peixian Li1Shengrui Xu2Xiaowei Zhou3Hongchang Tao4Wenkai Yue5Yanli Wang6Jiangtao Wu7Yachao Zhang8Yue Hao9Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaMagnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface directly, this method results in a continuous and smooth GaN film with a smaller root mean square roughness. Besides, the introduction of the sputtered AlN layer reduces the dislocation density of GaN by 35.7%. We provide a pathway of GaN epitaxy on the h-BN surface, which significantly improves its surface morphology and crystal quality.https://www.mdpi.com/1996-1944/13/22/5118h-BNsapphiremagnetron sputtered AlNGaN
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jinxing Wu Peixian Li Shengrui Xu Xiaowei Zhou Hongchang Tao Wenkai Yue Yanli Wang Jiangtao Wu Yachao Zhang Yue Hao
spellingShingle	Jinxing Wu Peixian Li Shengrui Xu Xiaowei Zhou Hongchang Tao Wenkai Yue Yanli Wang Jiangtao Wu Yachao Zhang Yue Hao Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates Materials h-BN sapphire magnetron sputtered AlN GaN
author_facet	Jinxing Wu Peixian Li Shengrui Xu Xiaowei Zhou Hongchang Tao Wenkai Yue Yanli Wang Jiangtao Wu Yachao Zhang Yue Hao
author_sort	Jinxing Wu
title	Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
title_short	Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
title_full	Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
title_fullStr	Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
title_full_unstemmed	Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
title_sort	epitaxial growth of gan on magnetron sputtered aln/hexagonal bn/sapphire substrates
publisher	MDPI AG
series	Materials
issn	1996-1944
publishDate	2020-11-01
description	Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface directly, this method results in a continuous and smooth GaN film with a smaller root mean square roughness. Besides, the introduction of the sputtered AlN layer reduces the dislocation density of GaN by 35.7%. We provide a pathway of GaN epitaxy on the h-BN surface, which significantly improves its surface morphology and crystal quality.
topic	h-BN sapphire magnetron sputtered AlN GaN
url	https://www.mdpi.com/1996-1944/13/22/5118
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Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

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