Etching Characteristics of Si<i><sub>x</sub></i>N<i><sub>y</sub></i> Film on Textured Single Crystalline Silicon Surface Using Ar/CF<sub>4</sub> and He/CF<sub>4</sub> Surface-Discharge Plasma

Etching Characteristics of Si<i><sub>x</sub></i>N<i><sub>y</sub></i> Film on Textured Single Crystalline Silicon Surface Using Ar/CF<sub>4</sub> and He/CF<sub>4</sub> Surface-Discharge Plasma

In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (Si<i><sub>x</sub></i>N<i><sub>y</sub></i>) films using surface-discharge plasma under Ar/CF<sub>4</sub> and He/CF<sub>4</sub...

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Bibliographic Details
Main Authors: Toshiyuki Hamada, Shunsuke Masuda, Kazuki Nishida, Soma Yamamoto
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Coatings
Subjects:
surface-discharge plasma
maskless etching
electrode groove
silicon
silicon nitride (Si<i><sub>x</sub></i>N<i><sub>y</sub></i>)
Online Access:https://www.mdpi.com/2079-6412/10/6/563

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https://www.mdpi.com/2079-6412/10/6/563

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