Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band

Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band

Plasmonically induced transparency (PIT) in hexagon boron nitride (h-BN)-graphene-silica grating-based structure is proposed and demonstrated. By tuning the chemical potential of graphene and changing the geometry parameters of the proposed structure, PIT can be realized both within the upper restst...

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Main Authors: Shen Ye, Beilei Wu, Zixiao Wang, Chunran Sun, Buzheng Wei, Changbin Dong, Shuisheng Jian
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
Plasmonically-induced-transparency
hexagon boron nitride
graphene
reststrahlen band
Online Access:https://ieeexplore.ieee.org/document/8613784/
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spelling doaj-dead83a95aa34188bca4734a056766282021-03-29T17:52:08ZengIEEEIEEE Photonics Journal1943-06552019-01-0111111310.1109/JPHOT.2019.28933828613784Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen BandShen Ye0https://orcid.org/0000-0001-6430-831XBeilei Wu1Zixiao Wang2Chunran Sun3https://orcid.org/0000-0002-9736-3777Buzheng Wei4https://orcid.org/0000-0003-4723-9206Changbin Dong5https://orcid.org/0000-0002-4039-8493Shuisheng Jian6Key Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaKey Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaKey Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaKey Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaKey Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaKey Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaKey Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing, ChinaPlasmonically induced transparency (PIT) in hexagon boron nitride (h-BN)-graphene-silica grating-based structure is proposed and demonstrated. By tuning the chemical potential of graphene and changing the geometry parameters of the proposed structure, PIT can be realized both within the upper reststrahlen (RS) band and outside the RS band. The group delay of the PIT window is analyzed and can be up to ~0.15 ps within the upper RS band via changing the chemical potential of graphene and the parameters of the silica grating. Apart from that, a refractive index (RI) sensor with a sensitivity of up to 0.336 μm per RI unit outside the RS band is proposed by changing the RI of the sensor media. The proposed structure may have the application in the graphene-h-BN-based slow light devices and optical sensors.https://ieeexplore.ieee.org/document/8613784/Plasmonically-induced-transparencyhexagon boron nitridegraphenereststrahlen band
collection DOAJ
language English
format Article
sources DOAJ
author Shen Ye
Beilei Wu
Zixiao Wang
Chunran Sun
Buzheng Wei
Changbin Dong
Shuisheng Jian
spellingShingle Shen Ye
Beilei Wu
Zixiao Wang
Chunran Sun
Buzheng Wei
Changbin Dong
Shuisheng Jian
Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band
IEEE Photonics Journal
Plasmonically-induced-transparency
hexagon boron nitride
graphene
reststrahlen band
author_facet Shen Ye
Beilei Wu
Zixiao Wang
Chunran Sun
Buzheng Wei
Changbin Dong
Shuisheng Jian
author_sort Shen Ye
title Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band
title_short Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band
title_full Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band
title_fullStr Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band
title_full_unstemmed Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band
title_sort plasmonically induced transparency in hexagon boron nitride–graphene–silica grating-based structure within the upper reststrahlen band and outside the reststrahlen band
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2019-01-01
description Plasmonically induced transparency (PIT) in hexagon boron nitride (h-BN)-graphene-silica grating-based structure is proposed and demonstrated. By tuning the chemical potential of graphene and changing the geometry parameters of the proposed structure, PIT can be realized both within the upper reststrahlen (RS) band and outside the RS band. The group delay of the PIT window is analyzed and can be up to ~0.15 ps within the upper RS band via changing the chemical potential of graphene and the parameters of the silica grating. Apart from that, a refractive index (RI) sensor with a sensitivity of up to 0.336 μm per RI unit outside the RS band is proposed by changing the RI of the sensor media. The proposed structure may have the application in the graphene-h-BN-based slow light devices and optical sensors.
topic Plasmonically-induced-transparency
hexagon boron nitride
graphene
reststrahlen band
url https://ieeexplore.ieee.org/document/8613784/
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