Research progress of THz solid state amplifier

With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range. THz amplifier plays a key role in THz system because of its function ampl...

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Bibliographic Details
Main Authors: Guo Fangjin, Wang Weibo, Chen Zhongfei, Sun Hongzheng, Zhou Xibang, Tao Hongqi
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2019-08-01
Series:Dianzi Jishu Yingyong
Subjects:
thz
Online Access:http://www.chinaaet.com/article/3000107021
Description
Summary:With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range. THz amplifier plays a key role in THz system because of its function amplifying weak THz signals. This paper introduces the latest research progress of THz monolithic amplifier based on Gallium Nitride(GaN) High Electron Mobility Transistor(HEMT),Indium Phosphide(InP) HEMT and InP Heterojunction Bipolar Transistor/Double Heterojunction Bipolar Transistor(HBT/DHBT).
ISSN:0258-7998