About theory of extended interaction klystron and drift space in the form of medium with complex permittivity

• Main Author: Funtov, Aleksandr Andreevich
• Format: Article
• Language: English
• Published: Saratov State University 2021-09-01
• Series: Известия высших учебных заведений: Прикладная нелинейная динамика
• Subjects: resistive wall amplifier; metamaterial; extended interaction klystron
• Online Access: https://andjournal.sgu.ru/sites/andjournal.sgu.ru/files/text-pdf/2021/09/funtov_765-774.pdf

Purpose of this work is to construct a theory of extended interaction klystron with ordinary distributed resonators, but with a drift space in the form of medium with complex permittivity. Methods. For this, a hybrid of extended interaction klystron and an amplifier with a complex permittivity is considered in the framework of the weak signal approximation. Two types of configurations of a extended interaction klystron were considered: with two and three distributed resonators. For a two-resonator klystron with distributed interaction, two cases are considered: without reflections from the ends of distributed resonators and the case when the input binder is fully matched to the external transmission line, and for the second distributed resonator, the so-called condition of critical coupling of the “hot” resonator with the transmission line is satisfied. For a three-resonator klystron with distributed interaction, the case is considered without reflections from the ends of distributed resonators. Results and conclusion. According to the results of the developed theory of a weak signal in a extended interaction klystron with ordinary distributed resonators and a drift space with a complex dielectric constant, by choosing the parameters, it is possible to achieve a greater gain at a length that is shorter than in a conventional extended interaction klystron, all other things being equal. In addition, the presence of an intermediate distributed resonator makes it possible to increase the gain while maintaining the full length of the device.