Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor array
Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one of the main difficulties in the construction...
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| Format: | Article |
| Language: | English |
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Elsevier
2019-03-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137971833300X |