Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell

Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell

Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR) method. Bi- and Ag-doped-PbS quantum dot (QD) were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that B...

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Main Authors: Ningning Zhang, Xiaoping Zou, Yanyan Gao
Format: Article
Language:English
Published: Hindawi Limited 2015-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2015/326850
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spelling doaj-dd302fdb433148edb1eb38ff168284102020-11-24T22:34:24ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/326850326850Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar CellNingning Zhang0Xiaoping Zou1Yanyan Gao2Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, and School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, and School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, and School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, ChinaDoped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR) method. Bi- and Ag-doped-PbS quantum dot (QD) were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that Bi3+ entered the cube space of PbS as donor yielding interstitial doping Bi-doped-PbS QD, while Ag+ replaced Pb2+ of PbS as acceptor yielding substitutional doping Ag-doped-PbS QD. The novel Bi-doped-PbS/CdS and Ag-doped-PbS/CdS quantum dot cosensitized solar cell (QDCSC) were fabricated and power conversion efficiency (PCE) of 2.4% and 2.2% was achieved, respectively, under full sun illumination.http://dx.doi.org/10.1155/2015/326850
collection DOAJ
language English
format Article
sources DOAJ
author Ningning Zhang
Xiaoping Zou
Yanyan Gao
spellingShingle Ningning Zhang
Xiaoping Zou
Yanyan Gao
Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
International Journal of Photoenergy
author_facet Ningning Zhang
Xiaoping Zou
Yanyan Gao
author_sort Ningning Zhang
title Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
title_short Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
title_full Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
title_fullStr Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
title_full_unstemmed Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
title_sort heterovalent cation substitutional and interstitial doping in semiconductor sensitizers for quantum dot cosensitized solar cell
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2015-01-01
description Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR) method. Bi- and Ag-doped-PbS quantum dot (QD) were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that Bi3+ entered the cube space of PbS as donor yielding interstitial doping Bi-doped-PbS QD, while Ag+ replaced Pb2+ of PbS as acceptor yielding substitutional doping Ag-doped-PbS QD. The novel Bi-doped-PbS/CdS and Ag-doped-PbS/CdS quantum dot cosensitized solar cell (QDCSC) were fabricated and power conversion efficiency (PCE) of 2.4% and 2.2% was achieved, respectively, under full sun illumination.
url http://dx.doi.org/10.1155/2015/326850
work_keys_str_mv AT ningningzhang heterovalentcationsubstitutionalandinterstitialdopinginsemiconductorsensitizersforquantumdotcosensitizedsolarcell
AT xiaopingzou heterovalentcationsubstitutionalandinterstitialdopinginsemiconductorsensitizersforquantumdotcosensitizedsolarcell
AT yanyangao heterovalentcationsubstitutionalandinterstitialdopinginsemiconductorsensitizersforquantumdotcosensitizedsolarcell
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