Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell
Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR) method. Bi- and Ag-doped-PbS quantum dot (QD) were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that B...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/326850 |
| Summary: | Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR) method. Bi- and Ag-doped-PbS quantum dot (QD) were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that Bi3+ entered the cube space of PbS as donor yielding interstitial doping Bi-doped-PbS QD, while Ag+ replaced Pb2+ of PbS as acceptor yielding substitutional doping Ag-doped-PbS QD. The novel Bi-doped-PbS/CdS and Ag-doped-PbS/CdS quantum dot cosensitized solar cell (QDCSC) were fabricated and power conversion efficiency (PCE) of 2.4% and 2.2% was achieved, respectively, under full sun illumination. |
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| ISSN: | 1110-662X 1687-529X |