Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate
We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics-based TCAD simulation. The NCD substrate with h...
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Elsevier
2019-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719306345 |
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doaj-dcd2921718b941159f8dffa48f8a1ae52020-11-25T00:20:24ZengElsevierResults in Physics2211-37972019-06-0113Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrateJ. Oh0J. Ma1G. Yoo2School of Electronic Engineering, Soongsil University, Seoul 06938, South KoreaSchool of Electronic Engineering, Soongsil University, Seoul 06938, South KoreaCorresponding author.; School of Electronic Engineering, Soongsil University, Seoul 06938, South KoreaWe propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics-based TCAD simulation. The NCD substrate with high thermal conductivity reduces a lattice temperature of β-Ga2O3 and thus mitigates drain current degradation. Furthermore, the benefits become more pronounced with device scaling. These results suggest that the low-cost NCD can be a promising heteroepitaxial substrate for β-Ga2O3 devices applications.http://www.sciencedirect.com/science/article/pii/S2211379719306345 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
J. Oh J. Ma G. Yoo |
| spellingShingle |
J. Oh J. Ma G. Yoo Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate Results in Physics |
| author_facet |
J. Oh J. Ma G. Yoo |
| author_sort |
J. Oh |
| title |
Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate |
| title_short |
Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate |
| title_full |
Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate |
| title_fullStr |
Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate |
| title_full_unstemmed |
Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate |
| title_sort |
simulation study of reduced self-heating in β-ga2o3 mosfet on a nano-crystalline diamond substrate |
| publisher |
Elsevier |
| series |
Results in Physics |
| issn |
2211-3797 |
| publishDate |
2019-06-01 |
| description |
We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics-based TCAD simulation. The NCD substrate with high thermal conductivity reduces a lattice temperature of β-Ga2O3 and thus mitigates drain current degradation. Furthermore, the benefits become more pronounced with device scaling. These results suggest that the low-cost NCD can be a promising heteroepitaxial substrate for β-Ga2O3 devices applications. |
| url |
http://www.sciencedirect.com/science/article/pii/S2211379719306345 |
| work_keys_str_mv |
AT joh simulationstudyofreducedselfheatinginbga2o3mosfetonananocrystallinediamondsubstrate AT jma simulationstudyofreducedselfheatinginbga2o3mosfetonananocrystallinediamondsubstrate AT gyoo simulationstudyofreducedselfheatinginbga2o3mosfetonananocrystallinediamondsubstrate |
| _version_ |
1725367823072493568 |