Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate
We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics-based TCAD simulation. The NCD substrate with h...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719306345 |
| Summary: | We propose nano-crystalline diamond (NCD) as a heteroepitaxial substrate for beta-gallium oxide (β-Ga2O3), and investigate self-heating effect in β-Ga2O3 MOSFET on the NCD compared with a native Ga2O3 and other alternative substrate (SiC) using physics-based TCAD simulation. The NCD substrate with high thermal conductivity reduces a lattice temperature of β-Ga2O3 and thus mitigates drain current degradation. Furthermore, the benefits become more pronounced with device scaling. These results suggest that the low-cost NCD can be a promising heteroepitaxial substrate for β-Ga2O3 devices applications. |
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| ISSN: | 2211-3797 |