Removal Rate of Phosphorus from Molten Silicon
An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperatu...
Main Authors: | Kemmotsu Takayuki, Nagai Takashi, Maeda Masafumi |
---|---|
Format: | Article |
Language: | English |
Published: |
De Gruyter
2011-04-01
|
Series: | High Temperature Materials and Processes |
Subjects: | |
Online Access: | https://doi.org/10.1515/htmp.2011.002 |
Similar Items
-
Role of Silicon in Mediating Phosphorus Imbalance in Plants
by: An Yong Hu, et al.
Published: (2021-12-01) -
Effect of acid leaching conditions on impurity removal from silicon doped by magnesium
by: Stine Espelien, et al.
Published: (2017-07-01) -
Kinetics and Mechanism of Phosphorus Removal from Silicon in Vacuum Induction Refining
by: Safarian Jafar, et al.
Published: (2012-02-01) -
Phosphorus diffusion into silicon through an oxide layer /
by: Kahng, Dawon.
Published: (1959) -
Electrodeposition of Solar Cell Grade Silicon in High Temperature Molten Salts
by: Xu Junli, et al.
Published: (2013-04-01)