MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affec...

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Main Authors: D. Broxtermann, M. Sivis, J. Malindretos, A. Rizzi
Format: Article
Language:English
Published: AIP Publishing LLC 2012-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3679149
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spelling doaj-dc4ea4f56f054bcbaf26a7da993d4ca02020-11-25T00:00:27ZengAIP Publishing LLCAIP Advances2158-32262012-03-0121012108012108-510.1063/1.3679149011201ADVMBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEEDD. Broxtermann0M. Sivis1J. Malindretos2A. Rizzi3IV. physikalisches Institut, Georg-August-Universitaet Goettingen, GermanyIV. physikalisches Institut, Georg-August-Universitaet Goettingen, GermanyIV. physikalisches Institut, Georg-August-Universitaet Goettingen, GermanyIV. physikalisches Institut, Georg-August-Universitaet Goettingen, GermanyWe have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.http://dx.doi.org/10.1063/1.3679149
collection DOAJ
language English
format Article
sources DOAJ
author D. Broxtermann
M. Sivis
J. Malindretos
A. Rizzi
spellingShingle D. Broxtermann
M. Sivis
J. Malindretos
A. Rizzi
MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
AIP Advances
author_facet D. Broxtermann
M. Sivis
J. Malindretos
A. Rizzi
author_sort D. Broxtermann
title MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
title_short MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
title_full MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
title_fullStr MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
title_full_unstemmed MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
title_sort mbe growth of high electron mobility 2degs in algan/gan heterostructures controlled by rheed
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-03-01
description We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.
url http://dx.doi.org/10.1063/1.3679149
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AT arizzi mbegrowthofhighelectronmobility2degsinalganganheterostructurescontrolledbyrheed
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