| Summary: | Abstract The unfavorable I–V characteristics of perovskite solar cells (PSCs), such as the I–V hysteresis phenomena, have been one major obstacle for their future practical application. However, corresponding analysis based on traditional theories have shown non-negligible flaws and failed for satisfactory explanation. To present a novel mechanism, here we utilize for the first time the memristive property of the perovskite material to analyze the I–V characteristics of PSCs. The obtained joint physical model and the deduced equation may help solving the long-existent mysteries of the I–V characteristics of PSCs. On the basis of our analysis and memristor theory, we also propose an original device optimization strategy for PSCs, which may help further increase their performance to the limit.
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