Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering

• Main Authors: Shien-Uang Jen, Hui Sun, Hai-Pang Chiang, Sheng-Chi Chen, Jian-Yu Chen, Xin Wang
• Format: Article
• Language: English
• Published: MDPI AG 2016-12-01
• Series: Materials
• Subjects: Ga-doped ZnO (GZO) thin films; optoelectronic properties; rf sputtering; electrical stability
• Online Access: http://www.mdpi.com/1996-1944/9/12/987

In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film’s optoelectronic properties as well as the film’s electrical stability were investigated. The results showed that the film’s crystallinity degraded with increasing Ga content. The film’s conductivity was first enhanced due to the replacement of Zn2+ by Ga3+ before decreasing due to the separation of neutralized gallium atoms from the ZnO lattice. When the Ga content increased to 15.52 at %, the film’s conductivity improved again. Furthermore, all films presented an average transmittance exceeding 80% in the visible region. Regarding the film’s electrical stability, GZO thermally treated below 200 °C exhibited no significant deterioration in electrical properties, but such treatment over 200 °C greatly reduced the film’s conductivity. In normal atmospheric conditions, the conductivity of GZO films remained very stable at ambient temperature for more than 240 days.