A Thiazolothiazole-Based Semiconducting Polymer with Well-Balanced Hole and Electron Mobilities

• Main Authors: Masahiko Saito, Itaru Osaka
• Format: Article
• Language: English
• Published: MDPI AG 2019-01-01
• Series: Applied Sciences
• Subjects: semiconducting polymer; thiazolothiazole; organic field-effect transistors; n-type; ambipolar
• Online Access: https://www.mdpi.com/2076-3417/9/3/451
• ISSN: 2076-3417

We report the synthesis and properties of a new thiazolothiazole (TzTz)-based semiconducting polymer incorporating the dithienothienothiophenebisimide (TBI) unit, named PTzTBI. PTzTBI showed relatively deep HOMO and LUMO energy levels of −5.48 and −3.20 eV, respectively. Although PTzTBI mainly formed face-on backbone orientation unfavorable for transistors, PTzTBI functioned as an ambipolar semiconductor for the first time with TzTz-based polymers, with reasonably high and well-balanced hole (0.02 cm² V^−1 s^−1) and electron (0.01 cm² V^−1 s^−1) mobilities.