Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors

Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors

The trap-assisted charge injection in polyfluorene-poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) model systems with an Al or Al/LiF cathode is investigated. We find that inserting 1.3 nm LiF increases electron and hole injections simultaneously and the increase of holes is gre...

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Main Authors: Dongdong Wang, Michael Fina, Suhan Kim, Chunmei Zhang, Ting Zhang, Yonghong Deng, Kai Chen, Lijuan Liang, Samuel S. Mao, Andrew M. Minor, Gao Liu
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Materials
Subjects:
charge injection
trap
interface stability
polymer light-emitting diodes
Online Access:https://www.mdpi.com/1996-1944/12/15/2427
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spelling doaj-db76fe586a1f450f9cce3a9b2fc52fac2020-11-24T21:29:50ZengMDPI AGMaterials1996-19442019-07-011215242710.3390/ma12152427ma12152427Trap-Assisted Charge Injection into Large Bandgap Polymer SemiconductorsDongdong Wang0Michael Fina1Suhan Kim2Chunmei Zhang3Ting Zhang4Yonghong Deng5Kai Chen6Lijuan Liang7Samuel S. Mao8Andrew M. Minor9Gao Liu10Beijing Institute of Graphic Communication, Beijing 102600, ChinaDepartment of Mechanical Engineering, University of California, Berkeley, CA 94720, USANational Center for Electron Microscopy, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USABeijing Institute of Graphic Communication, Beijing 102600, ChinaEnergy Storage and Distributed Resources Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAEnergy Storage and Distributed Resources Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAEnergy Storage and Distributed Resources Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USABeijing Institute of Graphic Communication, Beijing 102600, ChinaDepartment of Mechanical Engineering, University of California, Berkeley, CA 94720, USANational Center for Electron Microscopy, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAEnergy Storage and Distributed Resources Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAThe trap-assisted charge injection in polyfluorene-poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) model systems with an Al or Al/LiF cathode is investigated. We find that inserting 1.3 nm LiF increases electron and hole injections simultaneously and the increase of holes is greater than electrons. The evolution of internal interfaces within polymer light-emitting diodes is observed by transmission electron microscopy, which reveals that the introduction of LiF improves the interface stability at both the cathode (cathode/polymer) and the anode (indium tin oxide (ITO)/PEDOT:PSS). Above-mentioned experimental results have been compared to the numerical simulations with a revised Davids model and potential physical mechanisms for the trap-assisted charge injection are discussed.https://www.mdpi.com/1996-1944/12/15/2427charge injectiontrapinterface stabilitypolymer light-emitting diodes
collection DOAJ
language English
format Article
sources DOAJ
author Dongdong Wang
Michael Fina
Suhan Kim
Chunmei Zhang
Ting Zhang
Yonghong Deng
Kai Chen
Lijuan Liang
Samuel S. Mao
Andrew M. Minor
Gao Liu
spellingShingle Dongdong Wang
Michael Fina
Suhan Kim
Chunmei Zhang
Ting Zhang
Yonghong Deng
Kai Chen
Lijuan Liang
Samuel S. Mao
Andrew M. Minor
Gao Liu
Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors
Materials
charge injection
trap
interface stability
polymer light-emitting diodes
author_facet Dongdong Wang
Michael Fina
Suhan Kim
Chunmei Zhang
Ting Zhang
Yonghong Deng
Kai Chen
Lijuan Liang
Samuel S. Mao
Andrew M. Minor
Gao Liu
author_sort Dongdong Wang
title Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors
title_short Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors
title_full Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors
title_fullStr Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors
title_full_unstemmed Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors
title_sort trap-assisted charge injection into large bandgap polymer semiconductors
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2019-07-01
description The trap-assisted charge injection in polyfluorene-poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) model systems with an Al or Al/LiF cathode is investigated. We find that inserting 1.3 nm LiF increases electron and hole injections simultaneously and the increase of holes is greater than electrons. The evolution of internal interfaces within polymer light-emitting diodes is observed by transmission electron microscopy, which reveals that the introduction of LiF improves the interface stability at both the cathode (cathode/polymer) and the anode (indium tin oxide (ITO)/PEDOT:PSS). Above-mentioned experimental results have been compared to the numerical simulations with a revised Davids model and potential physical mechanisms for the trap-assisted charge injection are discussed.
topic charge injection
trap
interface stability
polymer light-emitting diodes
url https://www.mdpi.com/1996-1944/12/15/2427
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