Integration of TaOx-based resistive-switching element and GaAs diode

Integration of TaOx-based resistive-switching element and GaAs diode

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...

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Bibliographic Details
Main Authors: Z. Xu, X. Tong, S. F. Yoon, Y. C. Yeo, C. K. Chia, G. K. Dalapati, D. Z. Chi
Format: Article
Language:English
Published: AIP Publishing LLC 2013-09-01
Series:APL Materials
Online Access:http://link.aip.org/link/doi/10.1063/1.4820421
Description
Summary:We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.
ISSN:2166-532X

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