Integration of TaOx-based resistive-switching element and GaAs diode
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-09-01
|
| Series: | APL Materials |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4820421 |