Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications
TlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single c...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2016-06-01
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| Series: | Materials Science-Poland |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/msp-2016-0034 |